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Product Detailed Parameters
- Description：MOSFET N CH 600V 15A TO-220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF260N60E is an N-channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a TO-220FP-3 through-hole package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V, a continuous drain current (Id) of 15 A, and a maximum drain-source on-resistance (Rds(on)) of 260 mΩ at a gate-source voltage (Vgs) of 10 V. The device has a gate charge (Qg) of 48 nC and a threshold voltage (Vgs(th)) of 3.5 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation (Pd) of 36 W.
Feature Summary
- SuperFET II architecture providing optimized switching performance
- Enhanced avalanche ruggedness for robust operation
- Low thermal resistance for efficient heat dissipation
Applications
- High-frequency power supplies
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet. Validate pinout compatibility with existing PCB footprints during the procurement phase.
Selection Notes
Select this component for designs requiring high-voltage handling with moderate current capabilities. The 260 mΩ Rds(on) balances conduction losses against switching efficiency. Consider the TO-220FP-3 package for applications needing reliable through-hole mounting and adequate thermal management without complex heatsinking solutions.
Part Context
This part belongs to onsemi's SuperFET II family, designed for general-purpose power switching. It complements other devices in the series offering varying Rds(on) values. The FCPF260N60E targets cost-sensitive applications where verified reliability and standard packaging are prioritized over ultra-low resistance metrics found in newer generations.
Replacement Considerations
Direct substitutes may include FCPF190N60E for lower resistance requirements or FCP20N60 for similar specifications. Verify pinout and thermal characteristics before substitution.
