FCPF260N65FL1-F154

$1.49

Description：MOSFET N-CH 650V 15A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube

SKU:3a7e9a73bc77 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 15A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF260N65FL1-F154

Overview

The FCPF260N65FL1-F154 is an N-Channel SUPERFET II MOSFET utilizing charge balance technology. It features a 650 V drain-source voltage and a maximum on-resistance of 260 mΩ at 10 V gate drive, with a typical value of 220 mΩ. The device supports a continuous drain current of 15 A at 25°C case temperature and withstands a pulsed current of 45 A. Key dynamic parameters include a total gate charge of 46 nC and an effective output capacitance of 223 pF. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

SUPERFET II architecture provides low conduction loss and superior switching performance through charge balance technology.
Optimized body diode reverse recovery characteristics enhance system reliability by removing the need for additional components.
Capable of withstanding extreme dv/dt rates and avalanche energy stress for robust operation in power systems.

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix F154 against the manufacturer's official documentation to confirm packaging details and shipping quantities. Ensure compatibility with TO-220F Ultra Narrow Lead (CASE 221BN) footprints during integration. Confirm RoHS compliance status directly from the datasheet before procurement.

Selection Notes

Select this component for high-voltage applications requiring efficient miniaturization and improved efficiency. The low gate charge and optimized reverse recovery make it suitable for designs prioritizing reduced component count and enhanced thermal management. Validate electrical parameters against specific circuit requirements.

Part Context

This part belongs to the SUPERFET II family, representing ON Semiconductor's high-voltage super-junction MOSFET series. The FRFET designation indicates optimized reverse recovery performance of the body diode. The device is designed for various power systems aiming for miniaturization and higher efficiency through advanced charge balance technology.

Replacement Considerations

Consult the official datasheet for direct substitutes. Verify pinout compatibility and electrical ratings when considering alternative packages or manufacturers.