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Product Detailed Parameters
- Description：MOSFET N-CH 650V 15A TO220F
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF260N65FL1 is a SuperFET II Fast IGBT FSII from onsemi, housed in a TO-247-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 260 A at 25°C. The device exhibits a low saturation voltage of 1.85 V and operates within a junction temperature range of -55°C to +175°C. Designed for high-power applications, it offers robust performance with fast switching capabilities suitable for demanding industrial environments.
Feature Summary
- SuperFET II technology for optimized switching performance
- Fast IGBT FSII design for reduced switching losses
- High current density capability in a standard TO-247-3 package
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific ordering suffix and compliance documentation directly with onsemi or authorized distributors. Confirm that the component meets all required environmental standards for your target application before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high current handling and efficient thermal management. Ensure adequate heatsinking is provided to maintain junction temperatures within specified limits during operation.
Part Context
This part belongs to onsemi's SuperFET II Fast IGBT family, which integrates advanced trench gate technology. These devices are engineered to provide superior efficiency and reliability compared to conventional IGBTs in high-power conversion systems.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.
