ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：27W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The onsemi FCPF360N65S3R0L is a single N-channel power MOSFET belonging to the SUPERFET III series. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 10 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.36 ohms. It utilizes a TO-220F package for through-hole mounting, providing a thermal dissipation capacity of 27 W at the case. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes SUPERFET III high-voltage super-junction technology for optimized performance
- Designed with enhanced switching characteristics suitable for hard-switching applications
- Features low gate charge to facilitate efficient drive requirements
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) topologies
Procurement Notes
Verify the specific suffix R0L against official datasheets to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical ratings required for the target circuit design. Cross-reference manufacturer documentation for any updates regarding RoHS compliance or material declarations prior to final procurement decisions.
Selection Notes
Select this component when a 650 V rating and moderate current handling are required in a through-hole format. Compare the 0.36 ohm on-resistance against alternative packages if higher current density is needed. Evaluate the thermal management capabilities of the TO-220F package relative to the expected power dissipation in the specific application environment.
Part Context
This device is part of the SUPERFET III family from onsemi, which integrates advanced super-junction architecture. This technology allows for lower on-resistance and improved switching efficiency compared to conventional planar MOSFETs. The series targets high-voltage applications requiring robust performance and reliability in compact form factors.
Replacement Considerations
Direct substitutes include other SUPERFET III devices with similar voltage and resistance ratings, such as the NTPF360N65S3H for through-hole variants or FCMT360N65S3 for surface-mount equivalents. Verify pinout compatibility and thermal characteristics before substitution.
