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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 1
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
FCPF380N60 is an N-channel enhancement mode MOSFET from the SuperFET II series, utilizing charge-balanced super-junction technology. It features a 600V drain-source voltage and a continuous drain current of 10.2A at case temperature. The device offers a maximum on-resistance of 380mΩ at 5A and 10V gate drive. Key dynamic parameters include a maximum total gate charge of 45nC at 10V and a maximum input capacitance of 1770pF at 25V. It is housed in a TO-220-3 through-hole package with a maximum power dissipation of 106W.
Feature Summary
- Super-junction architecture for low conduction and switching losses
- High avalanche energy capability for robust operation
- Optimized gate charge characteristics for efficient driving
Applications
- High-frequency switch-mode power supplies
- Synchronous rectification circuits
- DC-DC converter modules
Procurement Notes
Verify the specific suffix code against the manufacturer datasheet to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required thermal management specifications for the intended application environment. Confirm RoHS compliance status if environmental regulations apply to the final assembly process.
Selection Notes
Select this component when system requirements demand high efficiency in medium-power conversion applications. The low on-resistance minimizes heat generation during conduction phases. Evaluate the gate charge requirements against the available driver capability to ensure optimal switching speeds without excessive drive current demands.
Part Context
This part belongs to the SuperFET II family, representing an evolution in high-voltage MOSFET design. The series integrates advanced trench gate structures with super-junction body designs. This combination allows for reduced specific on-resistance compared to traditional planar technologies while maintaining reliable switching performance.
Replacement Considerations
Direct replacements must match the 600V rating, TO-220-3 package, and similar Rds(on) values. Verify pinout compatibility and thermal resistance characteristics before substitution.
