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Product Detailed Parameters
- Description：600V, N-CHANNEL, MOSFET, TO-220
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The Fairchild Semiconductor FCPF380N60-F152 is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a TO-220-3 through-hole package with a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 10.2 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 380 mΩ at 5 A and 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 45 nC at 10 V, input capacitance (Ciss) of 1770 pF at 25 V, and a maximum power dissipation of 106 W at case temperature.
Feature Summary
- SuperFET II technology for high efficiency and lower switching noise
- Enhanced avalanche ruggedness
- Lead-free finish and halogen-free construction
Applications
- High-frequency AC/DC converters
- Power factor correction circuits
- Resonant LLC converters
Procurement Notes
Verify the specific suffix -F152 against official documentation to confirm packaging details, as standard datasheets may list bulk or tube variations without specifying this exact suffix configuration. Ensure compatibility with thermal management requirements given the 106 W dissipation rating. Confirm component authenticity through authorized distribution channels due to potential legacy status following corporate integration.
Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling in through-hole applications. The low gate charge supports efficient operation in high-frequency topologies. Evaluate thermal resistance constraints carefully, as the specified power dissipation relies on adequate heatsinking at the case temperature.
Part Context
Fairchild Semiconductor's discrete product portfolio was integrated into onsemi. Part numbers containing underscores may be updated to hyphens in newer systems. This component represents the legacy SuperFET II generation, designed to improve system efficiency compared to previous trench technologies.
Replacement Considerations
Direct substitutes within the same family include FCP380N60E. Verify pinout and thermal characteristics when cross-referencing with other manufacturers' 600 V N-channel MOSFETs.
