FCPF380N60E-F152

Description：MOSFET N-CH 600V 10.2A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:bd325a234602 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 10.2A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：31W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF380N60E-F152

Overview

The FCPF380N60E-F152 is an N-Channel SuperFET II MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It features a TO-220F package with a maximum drain-source voltage of 600 V and a continuous drain current of 10.2 A at 25°C case temperature. The device has a maximum static drain-to-source on-resistance of 380 mΩ at VGS = 10V and ID = 5A. Typical gate charge is 34 nC, and effective output capacitance is 97 pF. Power dissipation is rated at 31 W at 25°C, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Utilizes super-junction charge balance technology for low on-resistance and reduced gate charge.
Capable of withstanding extreme dv/dt rates and high avalanche energy levels.
Optimized for minimizing conduction loss and providing superior switching performance.

Applications

LCD / LED / PDP TV Lighting
Solar Inverter
AC-DC Power Supply

Procurement Notes

Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required packaging type. Ensure compliance with RoHS standards if applicable to your manufacturing requirements. Check for any obsolescence notices or lifecycle status updates from the current supplier.

Selection Notes

Select this component for designs requiring high-voltage handling with efficient switching characteristics. Consider the thermal resistance values when designing heat sinking solutions for continuous operation. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds. Verify that the peak pulsed current ratings align with your circuit's inductive load conditions.

Part Context

This part belongs to the SuperFET II family, representing Fairchild Semiconductor's first generation of high-voltage super-junction MOSFETs. These devices are engineered to offer improved efficiency compared to traditional planar technologies. The series targets applications demanding system miniaturization and higher power conversion efficiency through reduced losses.