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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF380N60E is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series. It features a TO-220 package with through-hole mounting and three pins. Key electrical parameters include a drain-source voltage of 600V, a continuous drain current of 10.2A at case temperature, and a maximum drain-source resistance of 380mΩ at Vgs=10V. The device operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 106W at case temperature.
Feature Summary
- SuperFET II technology for optimized high-voltage performance
- Enhanced switching characteristics suitable for fast switching applications
- Robust thermal design for high-power dissipation
Applications
- High voltage power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the exact part number against official onsemi documentation, as datasheets may list similar variants like FCP380N60E or FCD380N60E. Confirm package type and pinout compatibility with your PCB design. Ensure compliance with RoHS and REACH requirements by checking the manufacturer's latest material composition statements before finalizing procurement.
Selection Notes
Select this component when a 600V N-channel MOSFET with moderate current handling is required in a through-hole package. Consider the 380mΩ Rds(on) for conduction loss calculations. Evaluate thermal management needs given the 106W dissipation rating. Compare gate charge specifications against driver capabilities to ensure efficient switching performance in your specific circuit topology.
Part Context
This device belongs to onsemi's SuperFET II family, which integrates advanced trench gate technology. The series is designed for general-purpose high-voltage switching applications. The TO-220 package provides reliable mechanical stability and heat dissipation for industrial and consumer electronics environments requiring robust discrete semiconductor solutions.
Replacement Considerations
Check for direct substitutes such as FCP380N60E or FCD380N60E from Fairchild/onsemi, ensuring identical pinout and electrical ratings. Verify that any alternative maintains the same SuperFET II architecture for comparable switching behavior. Cross-reference datasheets for minor parameter variations that might affect circuit performance.
