FCPF380N65FL1

Description：MOSFET N-CH 650V 10.2A TO220F
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube

SKU:42b77460e32c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 10.2A TO220F
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF380N65FL1

Overview

The onsemi FCPF380N65FL1 is an N-Channel SuperFET II FRFET MOSFET designed for high-voltage applications. It features a 650 V drain-source voltage rating and supports a continuous drain current of 10.2 A at case temperature. The device exhibits a maximum on-resistance of 380 mΩ at 10 V gate drive. Packaged in a TO-220F Ultra narrow lead format, it offers a power dissipation capacity of 33 W. Key electrical characteristics include a threshold voltage maximum of 5 V and a typical gate charge optimized for efficient switching performance.

Feature Summary

Utilizes SUPERFET II technology with charge balance architecture for low conduction losses
Optimized for low gate charge and output capacitance to enhance switching efficiency
Includes avalanche energy testing guarantees for improved reliability under stress

Applications

High-frequency power conversion circuits
Industrial motor control systems
Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific suffix designation when ordering, as package variations exist within the series. Confirm active status directly with the manufacturer or authorized distributors, as lifecycle changes may affect availability. Ensure thermal management solutions align with the specified 33 W dissipation rating for reliable operation.

Selection Notes

Select this component for designs requiring robust 650 V blocking capability with moderate current handling. The TO-220F package facilitates through-hole mounting while maintaining compact board space. Evaluate thermal resistance requirements against the 33 W power dissipation limit to ensure junction temperatures remain within safe operating areas during peak loads.

Part Context

This part belongs to the FCPF series from onsemi, leveraging SuperFET II technology. It represents a discrete power MOSFET solution intended for general-purpose high-voltage switching. The device integrates advanced superjunction structures to minimize on-state resistance without compromising breakdown voltage capabilities.