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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1580 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF400N60 is a single N-channel power MOSFET manufactured by onsemi, housed in a TO-220-3 through-hole package. It features a drain-source breakdown voltage of 600 V and a continuous drain current rating of 10 A at case temperature. The device exhibits a maximum on-resistance of 400 mΩ at 5 A with a 10 V gate drive. Key electrical characteristics include a gate threshold voltage of 3.5 V at 250 µA and a total gate charge of 38 nC at 10 V.
Feature Summary
- Single N-channel configuration for high-voltage switching applications
- Optimized low on-resistance for improved conduction efficiency
- Robust thermal performance suitable for through-hole mounting
Applications
- Industrial power supplies
- Uninterruptible Power Supplies (UPS)
- DC-to-AC converters
Procurement Notes
Verify component authenticity and datasheet revision status prior to integration. Confirm that the specific lot matches the required RoHS compliance documentation. Check for obsolescence notices as availability may be limited. Ensure the TO-220-3 package dimensions align with the target PCB footprint and thermal management design constraints.
Selection Notes
Select this component when a 600 V rating is required for high-voltage isolation. The 400 mΩ on-resistance balances conduction losses against switching speed. Verify that the 10 A current rating meets the peak load requirements under the expected ambient temperature conditions. Consider the 38 nC gate charge for driver capability assessment.
Part Context
This part belongs to the onsemi high-voltage MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon technology within the TO-220-3 standard leaded package. The device supports industrial and commercial power conversion architectures requiring reliable high-voltage blocking capabilities.
Replacement Considerations
Consult official cross-reference lists for direct pin-compatible substitutes. Verify that any alternative maintains the 600 V breakdown voltage and comparable Rds(on) specifications. Ensure thermal resistance values are equivalent to maintain system reliability.
