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Product Detailed Parameters
- Description：MOSFET N-CH 800V 11A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2350 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：35.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF400N80Z is an N-channel enhancement mode MOSFET from the SuperFET II series by onsemi. It features a maximum drain-source voltage of 800 V and a continuous drain current of 14 A. The device has a typical on-resistance of 0.4 Ω and a gate charge of 43 nC at specified conditions. It operates within a temperature range of -55°C to 150°C, with a power dissipation rating of 35.7 W. The component utilizes a TO-220F package for through-hole mounting.
Feature Summary
- Integrated body diode with low forward voltage characteristics
- SuperFET II technology optimized for high-voltage switching efficiency
- Enhanced avalanche ruggedness for robust operation
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) circuits
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure compliance with current RoHS standards and material declarations. Confirm that the TO-220F package dimensions match your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring 800 V blocking capability with moderate current handling. The SuperFET II architecture offers improved switching performance compared to standard planar technologies. Ensure adequate thermal management is provided due to the 35.7 W power dissipation limit in the TO-220F package.
Part Context
This part belongs to onsemi's SuperFET II family, which integrates advanced trench gate and field plate technologies. These devices are engineered to reduce switching losses and improve reliability in high-voltage applications. The FCPF400N80Z specifically targets cost-sensitive designs needing reliable 800 V performance.
Replacement Considerations
Direct substitutes include FCP850N80Z and FCPF1300N80Z from the same manufacturer. Verify pinout compatibility and electrical parameter margins, particularly Rds(on) and Id ratings, when cross-referencing these alternatives.
