FCPF400N80ZL1-F154

Overview

The FCPF400N80ZL1 is an N-Channel SuperFET II MOSFET featuring a TO-220F package. It provides a drain-source voltage of 800 V and continuous drain current of 11 A at 25°C case temperature. The device exhibits a typical on-resistance of 340 mΩ and total gate charge of 43 nC. Thermal resistance from junction to case is 3.5 °C/W, with power dissipation rated at 35.7 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Utilizes super-junction charge balance technology for low on-resistance and reduced gate charge.
• Includes internal gate-source ESD diode capable of withstanding over 2kV HBM surge stress.
• Features 100% avalanche testing for enhanced ruggedness.

Applications

• AC-DC Power Supply
• LED Lighting
• ATX Power

Procurement Notes

Verify the exact part number suffix against official documentation, as Fairchild Semiconductor part numbers containing underscores were transitioned to dashes during integration into ON Semiconductor systems. Confirm RoHS compliance status and check for any specific ordering or packing method variations listed in the manufacturer's current catalog before finalizing procurement.

Selection Notes

Select this component for high-voltage switching applications requiring low conduction losses and fast switching speeds. Ensure thermal management design accounts for the specified junction-to-case thermal resistance. Validate that the required drain current and voltage ratings align with the circuit's maximum operating conditions and ambient temperature constraints.

Part Context

This device belongs to the SuperFET II family, designed for high-efficiency power conversion. It represents a transition from Fairchild Semiconductor branding to ON Semiconductor following corporate integration. The product utilizes silicon super-junction technology to optimize performance metrics such as output capacitance and reverse recovery characteristics compared to conventional planar MOSFETs.

Replacement Considerations

FCPF400N80ZL1CN