FCPF400N80ZL1

Overview

The FCPF400N80ZL1 is an N-channel enhancement-mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 11 A at 25°C. The device has a maximum drain-source on-resistance (Rds(on)) of 0.4 Ω. It is housed in a TO-220F-3 package designed for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 43 nC at Vgs=10 V, a typical turn-on delay time of 16 ns, and a typical turn-off delay time of 40 ns. The power dissipation (Pd) is rated at 35.7 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

• SuperFET II technology integrates low Rds(on) with optimized gate charge for efficient high-voltage switching.
• TO-220F-3 plastic package provides robust thermal performance and mechanical stability for through-hole applications.
• Enhanced avalanche ruggedness supports reliable operation in inductive load switching scenarios.

Applications

• High-voltage DC-DC converters
• Motor control circuits
• Inductive load switching

Procurement Notes

Verify the specific suffix L1 against the datasheet revision to ensure compatibility with required lead-free or packaging specifications. Confirm that the TO-220F-3 footprint matches the target PCB design. Check for RoHS compliance status as indicated in the official documentation. Ensure thermal management solutions align with the 35.7 W power dissipation rating under expected operating conditions.

Selection Notes

Select this component when an 800 V rating is required for high-side or low-side switching. The 11 A current capability suits moderate power applications where low conduction losses are critical. Compare Qg values against driver capabilities to ensure adequate switching speed without excessive drive current requirements. Consider the thermal resistance of the TO-220F package for heat sink selection.

Part Context

This part belongs to onsemi's SuperFET II family, which combines trench gate technology with fast recovery body diodes. It is designed for general-purpose high-voltage switching applications. The FCPF400N80ZL1 variant specifically denotes the TO-220F-3 package configuration. It serves as a discrete solution for replacing older IGBTs or standard MOSFETs in cost-sensitive, high-voltage designs.

Replacement Considerations

Direct substitutes may include FCPF400N80Z. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same 800 V and 11 A ratings.

FAQ

What is the maximum drain-source voltage for the FCPF400N80ZL1?

The maximum drain-source voltage (Vdss) is 800 V.

Does the FCPF400N80ZL1 have an integrated body diode?

Yes, it features a fast-recovery body diode integrated within the N-channel MOSFET structure.