FCPF600N60Z

$1.33

Description：MOSFET N-CH 600V 7.4A TO220F
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:a3ffc1666ea6 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 7.4A TO220F
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：89W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF600N60Z

Overview

The Fairchild Semiconductor FCPF600N60Z is an N-channel enhancement mode MOSFET designed for high-voltage switching applications. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at case temperature. The device utilizes a TO-220F insulated package for through-hole mounting, providing thermal isolation. Key electrical characteristics include a maximum on-resistance of 380 mΩ and a typical gate charge of 40 nC at 10 V. It operates within a junction temperature range of -55 °C to +150 °C with a maximum power dissipation of 36 W.

Feature Summary

High-voltage N-channel enhancement mode construction
Thermally isolated TO-220F package design
Low on-resistance for efficient conduction
Robust avalanche energy capability

Applications

Switching power supply converters
Power factor correction circuits
Flat panel display TV power supplies
Electronic lamp ballasts

Procurement Notes

Verify the manufacturer designation carefully, as this component family has been associated with both Fairchild Semiconductor and onsemi due to corporate acquisitions. Confirm the specific datasheet version and marking details to ensure compatibility with existing designs. Check for any product change notices or lifecycle status updates that may affect long-term availability and sourcing strategies.

Selection Notes

Select this component for designs requiring reliable high-voltage switching in insulated packages. The 600 V rating suits general-purpose AC/DC conversion. Ensure the thermal management system supports the 36 W dissipation limit. Verify gate drive requirements against the 40 nC charge specification to optimize switching performance and minimize losses in the target application circuit.

Part Context

This part belongs to the UniFET™ series of high-voltage MOSFETs from Fairchild Semiconductor. The series is characterized by low on-resistance and superior switching performance. These devices are engineered for robust operation in demanding power electronics environments, offering improved reliability compared to standard planar technologies through optimized silicon structures.