FCPF650N80Z

$1.97

Description：MOSFET N-CH 800V 8A TO220F
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:4652498155ed Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 8A TO220F
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1565 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：30.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF650N80Z

Overview

The FCPF650N80Z is an N-channel enhancement-mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 14 A at 25°C. The device has a maximum on-resistance (Rds(on)) of 0.65 Ω. It utilizes a TO-220F package for through-hole mounting with three pins. Key electrical parameters include a typical gate charge (Qg) of 27 nC, a power dissipation (Pd) of 30.5 W at 25°C case temperature, and an operating temperature range from -55°C to +150°C.

Feature Summary

SuperFET II technology integrates low Rds(on) with ultra-low gate charge to minimize switching losses.
High avalanche energy capability ensures robustness under transient stress conditions.
Improved ESD protection withstands over 2 kV HBM stress via internal gate-source diode.

Applications

AC-DC power supplies
LED lighting drivers
Audio amplifiers
Notebook adapters
Industrial power systems

Procurement Notes

Verify the specific suffix 'Z' against the official onsemi datasheet to confirm RoHS compliance status. Ensure the TO-220F package dimensions match the target PCB footprint requirements. Confirm that the 800V rating aligns with the system's peak voltage stresses. Check for any recent part number updates due to corporate acquisitions or naming conventions.

Selection Notes

Select this component when high-voltage isolation and low conduction loss are required in through-hole designs. The SuperFET II architecture offers superior efficiency compared to standard planar MOSFETs. Consider the thermal resistance of the TO-220F package for heat dissipation needs. Evaluate the gate charge requirements against the driver circuit capabilities.

Part Context

This device belongs to the SuperFET II family, which combines trench gate technology with optimized cell layout. Originally developed by Fairchild Semiconductor, the product line was integrated into onsemi following their acquisition. The FCPF650N80Z represents a balance between voltage handling and current capacity for medium-power applications.