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The FCPF9N60NT is a single N-channel power MOSFET manufactured by Fairchild Semiconductor, part of the SupreMOS series. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 36A at case temperature. The device utilizes TO-220F-3 through-hole packaging with an isolated flange mount design. Key electrical characteristics include a maximum on-resistance of 90 milliohms at 18A and 10V gate drive, with a typical gate charge of 112 nC. It operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Validate package marking against official datasheet specifications to ensure correct identification. Check for obsolescence notices as manufacturing transitions may affect long-term supply stability.
Select this component for applications requiring robust high-voltage switching capabilities with moderate current handling. The TO-220F-3 package facilitates effective thermal management via direct heatsink mounting. Ensure gate drive voltage aligns with the specified 10V threshold for optimal Rds(on) performance. Consider thermal resistance values when designing PCB layouts or heat sink assemblies for sustained operation.
This device belongs to the SupreMOS family from Fairchild Semiconductor, designed for general-purpose power switching. It serves as a discrete solution for medium-power electronics where reliability and switching speed are critical. The TO-220F-3 form factor provides mechanical stability and thermal efficiency for industrial and consumer power supplies.
Equivalent parts include FCD9N60NTM and FCP9N60N from onsemi, offering similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for specific differences in gate charge and switching times.