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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2.6A IPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：585 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The FCU2250N80Z is a single N-Channel enhancement mode MOSFET from onsemi's SuperFET II family, utilizing super-junction technology. It features an 800V drain-source breakdown voltage and a continuous drain current of 2.6A. The device exhibits a maximum on-resistance of 2.25 ohms at room temperature. Key electrical characteristics include a gate charge of 14nC measured at 10V and a threshold voltage ranging up to 4.5V at 260µA. Input capacitance is specified at 585pF under 100V conditions. The component operates within a junction temperature range of -55°C to +150°C and is housed in an IPAK through-hole package.
Feature Summary
- Super-junction architecture for optimized low-loss performance
- Enhanced switching speed via reduced gate charge
- High voltage blocking capability for robust operation
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's latest documentation to confirm compliance with current environmental directives. Ensure the ordering part number matches the required IPAK package variant. Cross-reference the datasheet revision date to validate all electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when high voltage isolation is required alongside moderate current handling capabilities. The SuperFET II technology offers advantages in efficiency compared to traditional planar structures. Consider the thermal management requirements associated with the 2.25 ohm on-resistance during conduction phases in your circuit design.
Part Context
This device belongs to the SuperFET II series, representing onsemi's high-voltage super-junction MOSFET lineup. The family utilizes charge balance technology to achieve superior performance metrics. The FCU2250N80Z specifically targets applications demanding reliable switching at 800V levels within a through-hole form factor.
Replacement Considerations
Direct substitutes may include FCPF2250N80Z or similar SuperFET II variants with matching voltage and resistance ratings. Verify pinout compatibility and thermal characteristics before substitution.
