FCU360N65S3R0

$2.49

Description：MOSFET N-CH 600V IPAK
Series：SuperFET® III
Mfr：onsemi
Package：Tube

SKU:824059ae74d8 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V IPAK
Series：SuperFET® III
Mfr：onsemi
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Stub Leads, IPAK

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FCU360N65S3R0

Overview

The FCU360N65S3R0 is an N-channel power MOSFET from the SUPERFET III series, manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 10A at case temperature of 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 360mΩ. Key electrical characteristics include a typical gate charge of 17.5nC and a maximum power dissipation of 83W at 25°C. It operates within a junction temperature range of -55°C to +150°C and supports a single pulse avalanche energy of 40mJ.

Feature Summary

Utilizes charge balance technology to achieve low conduction losses and minimal switching energy dissipation through reduced gate charge and effective output capacitance.
Ensures high reliability with 100% avalanche testing for every unit, maintaining stable operation under extreme stress conditions.
Designed for efficient power conversion applications by minimizing figure-of-merit metrics related to on-resistance and gate charge.

Applications

High-efficiency power supply designs requiring robust performance
Industrial motor control systems demanding high reliability
Automotive electronics applications meeting strict quality standards

Procurement Notes

Verify the specific suffix R0 against official datasheets to confirm package type and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure storage conditions adhere to moisture sensitivity levels defined in the manufacturing documentation to prevent damage prior to assembly.

Selection Notes

Select this component for designs prioritizing low switching losses and high ruggedness. The SUPERFET III architecture offers optimized performance for hard-switching applications. Evaluate thermal management requirements based on the 83W dissipation rating and ensure adequate heatsinking for sustained operation above 25°C case temperature.

Part Context

This part belongs to onsemi's SUPERFET III family, which integrates advanced trench gate and field plate technologies. The series is engineered for high-voltage power switching applications, balancing low on-resistance with fast switching speeds. The IPAK package provides a cost-effective solution for through-hole mounting in various power electronic circuits.

Replacement Considerations

Cross-reference with FCP360N65S3R0 for surface-mount TO-252 alternatives or NVD360N65S3 for similar performance in different packages. Verify pinout compatibility and thermal resistance values before substitution to ensure circuit integrity.