FCU5N60TU

Overview

The FCU5N60TU is an N-channel enhancement mode MOSFET from onsemi’s MegaFET series, designed for high-voltage power switching applications. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 4.6 A at 25°C. The device utilizes I-PAK surface-mount packaging with a thermal resistance optimized for efficient heat dissipation. Key electrical parameters include a maximum on-resistance (Rds(on)) of 1.8 Ω at Vgs = 10 V, a typical gate charge (Qg) of 12 nC at Vgs = 10 V, and a maximum pulsed drain current of 18 A. The component operates within a junction temperature range of -55°C to +175°C, ensuring reliability in demanding industrial environments.

Feature Summary

• High-voltage capability with 600 V breakdown voltage for robust performance in power conversion circuits
• Low gate charge characteristics enabling fast switching speeds and reduced drive power requirements
• I-PAK surface-mount package design providing efficient thermal management and compact board space utilization

Applications

• High-frequency DC-DC converters and synchronous rectification stages
• Industrial motor control and power supply output stages
• Uninterruptible power supply (UPS) systems and battery management circuits

Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm exact electrical tolerances and marking variations. Ensure the procurement channel provides traceable documentation matching the original equipment manufacturer's specifications. Cross-reference the part number with authorized distributor lists to avoid counterfeit components. Confirm that the received units match the required I-PAK package dimensions and pinout configuration before integration into production assemblies.

Selection Notes

Select this component when designing circuits requiring 600 V isolation with moderate current handling capabilities around 4.6 A. Consider the 1.8 Ω on-resistance for conduction loss calculations in low-to-medium power applications. The I-PAK package is suitable for automated surface-mount assembly processes. Evaluate thermal constraints based on the specified junction temperature range and ensure adequate heatsinking or copper pour area is allocated on the PCB layout to maintain safe operating temperatures under load.

Part Context

This device belongs to onsemi’s MegaFET family, which integrates advanced planar trench technology to optimize the balance between on-resistance and gate charge. The MegaFET series is engineered for high-efficiency power management solutions across industrial and consumer electronics sectors. The FCU5N60TU specifically targets applications where high voltage blocking is critical alongside reliable switching performance in compact form factors.

Replacement Considerations

Direct substitutes must match the 600 V rating, N-channel configuration, and I-PAK footprint. Verify equivalent Rds(on) and Qg values to ensure circuit compatibility. Check for identical pinout assignments to prevent soldering errors during replacement.