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Product Detailed Parameters
- Description：MOSFET N-CH 650V 6A IPAK
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The FCU600N65S3R0 is an N-channel enhancement-mode power MOSFET from the SUPERFET III series by onsemi. It features a 650 V drain-source voltage rating and a continuous drain current of 6 A. The device has a maximum on-resistance of 600 mΩ at 25°C. It utilizes a TO-220 package with surface mount capabilities, offering a thermal resistance suitable for high-power applications. The component operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- SUPERFET III technology provides optimized performance for hard-switching applications.
- Easy Drive gate structure simplifies driver design requirements.
- Low on-resistance minimizes conduction losses in power circuits.
Applications
- High-frequency switching power supplies
- Motor control systems
- Industrial inverters
Procurement Notes
Verify the specific suffix R0L or R0 against the official datasheet to confirm pinout and packaging details. Ensure the source document explicitly lists FCU600N65S3R0 as the active part number. Check for any recent lifecycle status changes such as obsolescence or last-time buy notices directly from manufacturer announcements.
Selection Notes
Select this component when a 650 V rating and approximately 6 A continuous current are required. The 600 mΩ on-resistance balances conduction and switching losses for moderate power levels. Consider the TO-220 package for through-hole or surface-mount integration depending on board layout constraints and thermal management needs.
Part Context
This part belongs to the SUPERFET III family, which integrates advanced trench gate technology. The series is designed for efficiency improvements over previous generations. The FCU prefix typically indicates a specific package variant within the broader 650 V product line.
Replacement Considerations
Direct substitutes include FCP165N65S3R0L for lower resistance but higher current, or FCD600N65S3R0 for similar electrical characteristics in a different package. Verify pin compatibility and thermal performance before substitution.
