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The Infineon FD-DF80R12W1H3_B52 is an EasyPACK IGBT module featuring Trench/Fieldstop IGBT3 and Rapid 1 diode technologies with PressFIT connections. It supports high-frequency switching, solar applications, buck, boost, and chopper topologies. Key electrical parameters include a collector-emitter voltage of 1200V for buck configurations and 650V for boost. Continuous collector current reaches 40A at 80°C (buck) or 100°C (boost), with repetitive peak currents up to 80A or 100A respectively. Total power dissipation is 215W (buck) or 200W (boost). The module includes an integrated NTC thermistor rated at 5kΩ at 25°C.
Verify the specific ordering suffix B52 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with PressFIT assembly tools and verify thermal interface material requirements for the EasyPACK housing. Confirm RoHS compliance status through the manufacturer's latest product qualification reports before finalizing procurement.
Select this module for designs requiring low VCEsat and fast switching speeds in compact EasyPACK housings. Consider the 2.5 kV AC insulation rating for safety isolation needs. Evaluate thermal resistance values (RthJC) against heatsink capabilities to ensure junction temperatures remain within the -40°C to +150°C operating range under expected load conditions.
This component belongs to Infineon's High Speed IGBT H3 series within the EasyPACK family. It utilizes silicon technology and features rugged mounting due to integrated clamps. The module is designed for industrial applications requiring reliable power conversion with minimized parasitic inductance and enhanced blocking voltage capabilities.
Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement modules match the EasyPACK footprint, PressFIT pin configuration, and equivalent electrical ratings for VCES, IC nom, and thermal characteristics.