SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD1000R33HE3-K is an IHM-B module featuring a fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. It has a collector-emitter voltage (VCES) of 3300 V, continuous DC collector current (ICDC) of 1000 A at TC = 95°C, and repetitive peak collector current (ICRM) of 2000 A. The collector-emitter saturation voltage (VCEsat) ranges from 2.55 V to 3.45 V depending on temperature. Gate threshold voltage (VGEth) is typically 5.80 V. Thermal resistance junction-to-case is 11.0 K/kW for the IGBT and 20.0 K/kW for the brake-chopper diode. Operating temperature range is -40°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet version matches the specific manufacturing batch. Ensure compliance with RoHS directives and export regulations applicable to your region before finalizing procurement.
Select this module for high-power applications requiring robust short-circuit withstand capability and high thermal cycling endurance. Consider the AlSiC base plate for superior heat dissipation in demanding environments. Verify gate resistor values to optimize switching losses against voltage spikes within the 3300 V rating.
This component belongs to the IHM-B module family designed for high-power industrial and traction applications. It utilizes Infineon's Trenchstop IGBT3 technology combined with Emitter Controlled 3 diodes to achieve optimized performance characteristics for medium-voltage power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for qualified alternatives that match the IHM-B housing and electrical specifications.