FD1000R33HE3KBOSA1

FD1000R33HE3KBOSA1

  • Description:IGBT MODULE 3300V 1000A
  • Series:IHM-B

SKU:64368b939fa8 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MODULE 3300V 1000A
  • Series:IHM-B
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Dual Brake Chopper
  • Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 1kA
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):3300 V
  • Current - Collector (Ic) (Max):1000 A
  • Power - Max:11500 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:190 nF @ 25 V

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FD1000R33HE3KBOSA1

Overview

The FD1000R33HE3-K is an IHM-B module featuring a fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. It has a collector-emitter voltage (VCES) of 3300 V, continuous DC collector current (ICDC) of 1000 A at TC = 95°C, and repetitive peak collector current (ICRM) of 2000 A. The collector-emitter saturation voltage (VCEsat) ranges from 2.55 V to 3.45 V depending on temperature. Gate threshold voltage (VGEth) is typically 5.80 V. Thermal resistance junction-to-case is 11.0 K/kW for the IGBT and 20.0 K/kW for the brake-chopper diode. Operating temperature range is -40°C to +150°C.

Feature Summary

  • High short-circuit capability with high DC stability
  • Low switching losses and low VCEsat
  • AlSiC base plate for increased thermal cycling capability
  • Isolated base plate with CTI > 600

Applications

  • Chopper applications
  • Medium voltage converters
  • Motor drives
  • Traction drives
  • UPS systems
  • Wind turbines

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet version matches the specific manufacturing batch. Ensure compliance with RoHS directives and export regulations applicable to your region before finalizing procurement.

Selection Notes

Select this module for high-power applications requiring robust short-circuit withstand capability and high thermal cycling endurance. Consider the AlSiC base plate for superior heat dissipation in demanding environments. Verify gate resistor values to optimize switching losses against voltage spikes within the 3300 V rating.

Part Context

This component belongs to the IHM-B module family designed for high-power industrial and traction applications. It utilizes Infineon's Trenchstop IGBT3 technology combined with Emitter Controlled 3 diodes to achieve optimized performance characteristics for medium-voltage power conversion systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for qualified alternatives that match the IHM-B housing and electrical specifications.

FD1000R33HE3KBOSA1FD1000R33HE3KBOSA1

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