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The FD1200R17KE3KB2NOSA1 is a brake-chopper IGBT module from Infineon Technologies, rated at 1700 V and 1200 A. It utilizes TRENCHSTOP™ technology for optimized switching performance. The module features an AlSiC baseplate with internal AlN insulation, providing high thermal conductivity and electrical isolation. Key parameters include a collector-emitter saturation voltage of 2.45 V max at 1200 A, gate charge of 14.0 µC, and total power dissipation of 6.60 kW. Thermal resistance from junction to case is 19.0 K/kW for the IGBT and 42.0 K/kW for the diode.
Verify the specific ordering suffix B2 against official Infineon documentation to confirm material or packaging variations. Confirm RoHS compliance status through current datasheets as manufacturing processes evolve. Ensure compatibility with IHM mounting standards and verify torque specifications for M6 and M4 terminals during installation.
Select this component for high-power applications requiring robust chopper functionality and superior thermal cycling resistance. Evaluate the 1700 V rating against system DC-link voltages to ensure adequate safety margins. Consider the AlSiC baseplate benefits for applications demanding higher heat flux dissipation compared to traditional copper-based substrates.
This module belongs to the KE3 series of IGBT modules, representing a generation of devices optimized for industrial power electronics. It shares the physical dimensions and pinout of the standard FD1200R17KE3-K but includes specific manufacturing or material modifications indicated by the B2 suffix.
FD1200R17KE3-K