FD150R12RT4HOSA1

FD150R12RT4HOSA1

$80.16
  • Description:IGBT MOD 1200V 150A 790W
  • Series:C

SKU:eac7c6746ef7 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 150A 790W
  • Series:C
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Single Chopper
  • Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 150A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):150 A
  • Power - Max:790 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:9.3 nF @ 25 V

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FD150R12RT4HOSA1

Overview

The FD150R12RT4HOSA1 is a single-chopper IGBT module from Infineon Technologies, utilizing Trench Field Stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 150 A at 25°C. The device has a typical saturation voltage of 2.15 V at 150 A and 15 V gate drive. Maximum power dissipation is rated at 790 W. Operating temperature ranges from -40°C to +150°C junction temperature. The module employs chassis mounting for thermal management.

Feature Summary

  • Integrates Trench Field Stop technology for optimized switching performance and low conduction losses.
  • Designed with a rugged half-bridge configuration suitable for high-power industrial applications.
  • Features a robust chassis mount package structure to facilitate efficient heat transfer to cooling systems.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-frequency induction heating

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact technical specifications and pinout compatibility. Ensure that the requested component matches the required voltage and current ratings for the target application circuit. Cross-reference datasheet revisions to confirm material compliance and manufacturing status before finalizing procurement orders.

Selection Notes

Select this module for applications requiring high voltage isolation and moderate current handling in a compact form factor. Consider the thermal resistance characteristics and the necessity for chassis mounting solutions when designing the heatsink interface. Evaluate the switching frequency requirements against the Trench Field Stop capabilities to ensure optimal efficiency and thermal stability under load conditions.

Part Context

This component belongs to the broader category of insulated gate bipolar transistor modules designed for power conversion. It represents a specific variant within Infineon's portfolio focusing on reliability and performance in medium-power industrial electronics. The module integrates the semiconductor chip with a dedicated baseplate to support direct cooling methods.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing driver circuits and thermal interfaces if considering alternative models from other manufacturers or different series within the same brand.

FD150R12RT4HOSA1FD150R12RT4HOSA1
$80.16
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