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Product Detailed Parameters
- Description：IGBT MODULE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 1.6kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-ECONO2B
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：2600 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：105 nF @ 25 V
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Overview
The FD16001200R17KF6CB2NOSA1 is a high-power IGBT module manufactured by Infineon Technologies. It features a 1700 V blocking voltage and a nominal collector current of 1600 A. The device utilizes CoolMOS technology for optimized switching performance and low conduction losses. It is housed in an industrial-grade package designed for robust thermal management and mechanical stability. The module integrates anti-parallel fast recovery diodes, functioning as a half-bridge configuration suitable for high-current applications.
Feature Summary
- High current handling capability with 1600 A nominal rating
- Robust 1700 V blocking voltage for high-voltage systems
- Integrated anti-parallel diode for half-bridge operation
- Designed for efficient thermal dissipation in industrial environments
Applications
- Industrial motor drives and traction inverters
- Medium voltage variable frequency drives (VFDs)
- Uninterruptible power supplies (UPS) systems
- Induction heating equipment
Procurement Notes
Verify the complete ordering code including the NOSA1 suffix to ensure correct component revision. Confirm package compatibility and mounting torque specifications against the official datasheet before integration. Check for RoHS compliance status if required by specific regional regulations.
Selection Notes
Select this module for applications requiring high current density and reliable switching at 1700 V. Ensure the cooling system can handle the thermal resistance specified in the datasheet. Verify that the gate drive circuitry matches the recommended operating conditions for optimal switching speed and minimal losses.
Part Context
This part belongs to Infineon's high-power IGBT module portfolio, often associated with the FF or FZ series designations. It represents a mature technology node optimized for industrial power conversion. The numbering convention indicates specific voltage, current, and packaging characteristics defined by Infineon's internal classification system.
Replacement Considerations
Direct replacements may include other 1700 V, 1600 A IGBT modules from Infineon such as the FF1600R17KE4 or similar EconoDUAL variants. Cross-brand substitution requires careful evaluation of pinout compatibility, thermal characteristics, and electrical parameters.
