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The FD200R12PT4B6BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the Trenchstop IGBT4 - T4 series. It features a 6-Pack configuration with a maximum collector-emitter voltage (VCEO) of 1.2 kV. The device supports a continuous collector current of 200 A at 25°C and exhibits a collector-emitter saturation voltage of 1.75 V. Power dissipation is rated at 680 W, with an operating temperature range from -40°C to +150°C. The component utilizes PressFIT termination technology within the EconoPACK housing.
Verify the specific ordering suffix B6 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Confirm that the PressFIT termination method aligns with the target PCB design requirements before procurement.
Select this module when a 1.2 kV rating and 200 A continuous current capacity are required for high-efficiency power conversion. Ensure the thermal management solution can handle the specified 680 W power dissipation while maintaining junction temperatures within the +150°C limit.
This component is part of Infineon's Trenchstop IGBT4 family, designed for robust industrial performance. The EconoPACK PressFIT variant offers improved mechanical stability compared to traditional soldered modules, reducing long-term reliability risks in high-vibration environments.
Direct substitutes include other Infineon Trenchstop IGBT4 modules with identical electrical ratings and PressFIT termination, such as the FS200R12PT4B6BOSA1, provided pin compatibility and thermal interface dimensions match the existing design.