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Product Detailed Parameters
- Description：IGBT MOD 6500V 250A 4800W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 250A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-50°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：6500 V
- Current - Collector (Ic) (Max)：250 A
- Power - Max：4800 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：69 nF @ 25 V
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Overview
The FD250R65KE3-K is a highly insulated IGBT module utilizing Trench/Fieldstop IGBT3 technology and an emitter-controlled diode. It features a collector-emitter voltage of 6500 V and a nominal continuous collector current of 250 A at 80 °C case temperature, with a repetitive peak current capability of 500 A. The module incorporates an AlSiC base plate to enhance thermal cycling endurance and provides high creepage and clearance distances for robust insulation. It includes one inverter IGBT switch paired with two freewheeling diodes (one for the inverter leg and one for the brake-chopper circuit).
Feature Summary
- Highly insulated package designed for demanding electrical isolation requirements.
- AlSiC base plate construction engineered to increase thermal cycling capability.
- Extended storage temperature range extending down to -55 °C.
Applications
- Traction drives
- Medium-voltage converters
Procurement Notes
Verify component authenticity by cross-referencing the data matrix barcode on the module label against official Infineon records. Ensure compliance with export regulations if sourcing from restricted regions. Confirm that the specific ordering suffix matches the required technical specifications before finalizing procurement orders.
Selection Notes
Select this module for applications requiring high voltage blocking capabilities and robust mechanical insulation. Verify that the system's cooling infrastructure can manage the specified thermal resistance values. Ensure gate drive circuits are compatible with the internal gate resistor and recommended operating voltages to maintain optimal switching performance.
Part Context
This component belongs to the IGBT3-E3 product family, representing Infineon's third-generation trench field-stop technology. It is specifically engineered for industrial and traction environments where high reliability under harsh electrical conditions is mandatory. The module integrates advanced semiconductor structures within a mechanically reinforced housing.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative modules based on matching voltage ratings, current capacities, and physical footprint dimensions when considering replacements.
FAQ
What is the maximum isolation test voltage for this module?
The module supports an isolation test voltage of 10.4 kV RMS at 50 Hz for 60 seconds.
Does the module include a brake-chopper diode?
Yes, the module contains an emitter-controlled diode specifically configured for use in a brake-chopper circuit.
What material is used for the module base plate?
The module utilizes an Aluminum Silicon Carbide (AlSiC) base plate to improve thermal cycling capability.
