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Product Detailed Parameters
- Description：IGBT MOD 1200V 370A 1950W
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：3.75V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：370 A
- Power - Max：1950 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：20 nF @ 25 V
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Overview
The FD300R12KS4HOSA1 is a single IGBT module from the Chopper IGBT2 Fast series, manufactured by Infineon Technologies. It features a 1200 V collector-emitter maximum voltage and a continuous collector current of 370 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 3.2 V and a power dissipation rating of 1.95 kW. Designed for screw mounting in a 62 mm package, it operates within a temperature range of -40°C to +125°C. The gate-emitter leakage current is specified at 400 nA, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Utilizes fast short tail IGBT chip technology for efficient switching performance.
- Configured as a single switch chopper module suitable for high-power applications.
- Constructed using silicon (Si) technology within an industrial-grade quality classification.
Applications
- Industrial drives
- Welding equipment
- Uninterruptible Power Supply (UPS)
- Commercial and agricultural vehicles
Procurement Notes
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm exact manufacturing details and compliance status. Confirm availability status as the component may be subject to end-of-life or not recommended for new design restrictions. Ensure compatibility with required thermal interface materials and mounting hardware specifications before procurement.
Selection Notes
Select this module for applications requiring a single-switch configuration with high current handling capabilities up to 370 A. Consider the 1200 V blocking voltage and 1.95 kW power dissipation limits when designing the thermal management system. Verify that the 62 mm screw-mount package fits the intended mechanical constraints and that the operating junction temperature remains within the specified -40°C to +125°C range.
Part Context
This component belongs to the FD300R12KS4 family, specifically identified by the alias SP000396766. It is part of Infineon's broader portfolio of IGBT silicon modules designed for medium power applications. The module shares technical characteristics with other devices in the Chopper IGBT2 Fast series, focusing on robust performance in industrial environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon replacement guides for potential alternatives if this specific variant is discontinued or unavailable.
FAQ
What is the maximum collector-emitter voltage for the FD300R12KS4HOSA1?
The maximum collector-emitter voltage (VCEO) is 1.2 kV.
Is the FD300R12KS4HOSA1 a half-bridge or single switch module?
It is configured as a single switch module.
What is the typical collector-emitter saturation voltage at 25°C?
The typical collector-emitter saturation voltage is 3.2 V.
