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The FD450R12KE4HPSA1 is a single IGBT module from Infineon's 62 mm C-Series, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 450 A at 100 °C case temperature. The typical saturation voltage is 1.75 V at 25 °C. The package includes an integrated brake-chopper IGBT and diode, alongside a reverse diode. Key electrical parameters include a repetitive peak collector current of 900 A, a gate-emitter peak voltage of ±20 V, and a maximum operating junction temperature of 150 °C.
Verify the specific suffix HPSA1 against official documentation to confirm packaging or handling variations. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068. Confirm mounting torque specifications for M6 screws during installation to maintain thermal interface integrity.
Select this component for high-power density designs requiring 1200 V blocking capability. Evaluate thermal resistance values (RthJC) for heat sink sizing based on expected junction temperatures. Consider the stray inductance of 20 nH when designing PCB layouts to minimize voltage overshoot during switching events.
This part belongs to Infineon's 62 mm C-Series module family, designed for industrial power electronics. It utilizes silicon technology and is housed in a standard screw-mount package. The series is characterized by high power density and optimized switching characteristics suitable for demanding converter topologies.
Consult official cross-reference lists for compatible modules within the same voltage and current ratings. Verify pinout compatibility and mechanical dimensions before substituting with other manufacturers' offerings.
The maximum repetitive peak collector current (ICRM) is 900 A, limited by the operating junction temperature.
Yes, the module integrates both an IGBT and a diode configured for brake-chopper applications.
The isolation test voltage (VISOL) is rated at 4.0 kV RMS for 1 minute at 50 Hz.