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The FD600R06ME3_B11_S2 is a Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode module in the EconoDUAL™3 package. It features PressFIT connection technology and an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 600 V, with a nominal continuous DC collector current (IC nom) of 600 A at TC = 80°C and Tvj max = 150°C. The repetitive peak collector current (ICRM) reaches 1200 A for 1 ms pulses. Total power dissipation (Ptot) is 2250 W at TC = 25°C. The gate-emitter peak voltage (VGES) is ±20 V. The typical collector-emitter saturation voltage (VCE sat) is 1.35 V at Tvj = 25°C and 1.60 V at Tvj = 125°C for IC = 600 A.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Ensure compatibility with existing PCB layouts and mounting hardware requirements before procurement.
Evaluate thermal resistance values and maximum junction temperature limits for the intended operating environment. Confirm that the required gate drive voltages and currents align with the specified characteristics for optimal switching behavior.
This component belongs to the EconoDUAL™3 series from Infineon Technologies. It utilizes advanced IGBT3 technology designed for high-power industrial applications requiring efficient energy conversion and robust operation under demanding conditions.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the package dimensions, pin configuration, and electrical ratings precisely.
The maximum repetitive peak collector current (ICRM) is 1200 A for a pulse duration of 1 ms.
The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C for accurate temperature tracking.
The isolation test voltage (VISOL) is rated at 2.5 kV RMS for 1 minute at 50 Hz.