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Product Detailed Parameters
- Description：IGBT MODULE 1200V 600A
- Series：EconoDUAL™ 3
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 600A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：3900 W
- Current - Collector Cutoff (Max)：8 mA
- Input Capacitance (Cies) @ Vce：45 nF @ 25 V
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Overview
The FD600R12KF4NOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC) of 600 A. The device incorporates an integrated inverse diode with a forward current (IF) of 600 A. Key electrical parameters include a maximum collector-emitter saturation voltage (VCEsat) of 3.2 V at 25°C and a typical turn-on energy (Eon) of 90 mWs at 125°C. Thermal resistance from junction to case (RthJC) is specified at 0.016 °C/W for the transistor and 0.032 °C/W for the diode per arm.
Feature Summary
- Dual configuration integrating both IGBT and inverse diode components within a single housing.
- High power density design utilizing internal Al2O3 insulation for enhanced reliability.
- Robust short-circuit protection capabilities supporting up to 5000 A under standard conditions.
Applications
- High-power industrial converters
- Motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the ordering suffix matches the exact datasheet specifications. Ensure compliance with RoHS directives and check for specific quality agreements if intended for life-support or aviation applications as outlined in the usage terms.
Selection Notes
Select this module based on the required 1200 V blocking capability and 600 A continuous current rating. Evaluate thermal management requirements against the specified RthJC values and ensure the operating junction temperature remains within the -40°C to +150°C range. Verify gate drive voltage limits do not exceed ±20 V.
Part Context
This component belongs to the KF4 series of high-power IGBT modules. It utilizes trench gate technology optimized for low conduction and switching losses. The module is designed for demanding industrial environments requiring high robustness and efficient thermal dissipation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official replacement guides for cross-referencing with newer generations or alternative configurations.
FAQ
What is the maximum short-circuit current rating?
Under standard conditions (tfg = 10 µs, VCC = 750 V, tvj = 125°C), the module supports a short-circuit current of 5000 A.
What is the isolation test voltage?
The module withstands an insulation test voltage of 2.5 kV RMS at 50 Hz for 1 minute.
What is the peak reverse recovery current of the inverse diode?
The peak reverse recovery current (IRM) is typically 200 A at 25°C and 350 A at 125°C, measured at a diF/dt of 3.0 kA/µs.
