SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD650R17IE4BOSA2 is a single IGBT with an integrated anti-parallel diode in the PrimePACK™2 housing. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 650 A at 25°C. The module utilizes TRENCHSTOP™ IGBT4 technology, offering low saturation voltage and switching losses. Key electrical parameters include a typical VCEsat of 2.00 V at 25°C and a forward voltage of 1.85 V for the diode. Thermal resistance from junction to case is 36.0 K/kW for the IGBT and 71.5 K/kW for the diode. The unit includes an NTC thermistor rated at 5 kΩ.
Verify the specific ordering suffix BOSA2 against official Infineon documentation to confirm material composition and compliance status. Ensure that the procurement channel provides valid traceability data matching the module serial number and date code printed on the component label.
Select this module for high-current applications requiring robust thermal cycling capability. Verify that the gate drive circuitry supports the specified internal gate resistor values and peak voltages. Confirm that the cooling system can maintain the case temperature within the limits required for the desired continuous current rating.
This component belongs to the PrimePACK™2 series designed for high-power density installations. It represents the IGBT4 generation, focusing on reducing switching losses while maintaining high short-circuit withstand capability. The package is standardized for screw mounting with M5 terminals.
Direct replacements must match the 1700V/650A rating and PrimePACK™2 footprint. Verify pinout compatibility and thermal resistance specifications before substitution.