FD6M043N08

FET, MOSFET Arrays Overview

The FD6M043N08 is a synchronous rectifier module from the Power-SPM family, designed for high-efficiency secondary-side rectification in isolated converters. It integrates two N-channel MOSFETs in an EPM15 package with fully isolated construction. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 75V and a continuous drain current (ID) of 65A at VGS = 10V. The typical on-resistance (RDS(ON)) is 3.5mΩ at VGS = 10V and ID = 40A, rising to 6.44mΩ at TJ = 150°C. Total gate charge (Qg(TOT)) is typically 99nC at VGS = 10V. The device supports unclamped inductive switching with single pulse avalanche energy up to 681mJ. Operating temperature range spans from -40°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrated dual MOSFET solution optimized for compact board space and high rectification efficiency at 12V output.
• Low Miller charge and low body diode reverse recovery characteristics enhance switching performance.
• Fully isolated package design suitable for secondary side applications in PWM transformers.
• Capable of handling single pulse and repetitive pulse unclamped inductive switching events.

FET, MOSFET Arrays Applications

• High Current Isolated Converter
• Distributed Power Architectures
• Synchronous Rectification
• DC/DC Converter
• Battery Supplied Application

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels as the part may be discontinued or subject to lifecycle changes. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management aligns with the specified junction-to-case thermal resistance of 3.9°C/W. Validate that the EPM15 package dimensions match the PCB footprint requirements. Check for any specific handling precautions related to the fully isolated package structure during assembly.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high current rectification at low output voltages, such as 12V down to 5V. Consider the 75V voltage rating and 65A current capability when designing forward, bridge, or full-bridge converters. Evaluate the thermal performance based on the maximum safe operating area curves. Ensure the gate drive voltage matches the 10V specification for optimal RDS(ON) performance. Account for the parasitic elements reduction benefits in EMI-sensitive designs.

FET, MOSFET Arrays Part Context

The FD6M043N08 belongs to the Power-SPM family developed by Fairchild Semiconductor, now part of onsemi. It is engineered specifically for synchronous rectification in internet server power supplies and telecom system power supplies. The module replaces discrete MOSFET solutions to minimize parasitic inductance and capacitance, thereby reducing voltage spikes and electromagnetic interference noise in high-frequency switching applications.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces if considering alternative synchronous rectifier modules within the same voltage and current class.