FD6M045N06

FET, MOSFET Arrays Overview

The FD6M045N06 is a synchronous rectifier module from the Power-SPM family, designed for compact and efficient secondary-side rectification in PWM transformer applications. It integrates two low RDS(ON) MOSFETs within a fully isolated EPM15 package to minimize parasitic elements, voltage spikes, and EMI noise. The device supports output voltages ranging from 12V down to 5V with a continuous drain current of 60A per switch at VGS = 10V. Key electrical parameters include a 60V breakdown voltage (BVDSS), a typical total gate charge (Qg(TOT)) of 66nC at VGS = 10V, and a typical on-resistance (RDS(ON)) of 3.55mΩ at ID = 40A. The module features UIS capability for single and repetitive pulses, with an avalanche energy rating of 794mJ.

FET, MOSFET Arrays Feature Summary

• Integrated dual-MOSFET solution providing high rectification efficiency at 12V outputs while saving board space through a fully isolated package design.
• Low Miller charge and low body diode reverse recovery characteristics (Qrr) enhance switching performance and reduce electromagnetic interference.
• Supports unclamped inductive switching (UIS) for both single pulse and repetitive pulse operations, ensuring robustness under transient conditions.

FET, MOSFET Arrays Applications

• High Current Isolated Converters
• Distributed Power Architectures
• Synchronous Rectification in DC/DC Converters
• Battery Supplied Applications
• ORing MOSFET configurations

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in the documentation. Ensure proper handling procedures are followed due to the surface mount nature of the EPM15 package. Review absolute maximum ratings before integration to prevent thermal or electrical overstress during operation.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high current rectification at low output voltages such as 12V or 5V. Consider the 60V drain-source voltage rating when designing forward, bridge, or full-bridge converters. Evaluate the thermal resistance of 3.9°C/W for heat dissipation requirements. Verify that the gate drive voltage aligns with the specified 10V test conditions for optimal RDS(ON) performance.

FET, MOSFET Arrays Part Context

The FD6M045N06 belongs to the Power-SPM family developed by Fairchild Semiconductor, now part of onsemi. This series targets power supply systems needing reduced parasitic elements and minimized EMI noise. The module replaces discrete MOSFET arrangements in secondary side rectification, offering a consolidated solution for telecom and server power supplies.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Check for updated revisions or equivalent modules within the Power-SPM family if discontinuation occurs.

FET, MOSFET Arrays FAQ

What is the maximum single pulse avalanche energy rating?

The single pulse avalanche energy (EAS) rating is 794 mJ, starting at a junction temperature of 25°C with VD = 40V and L = 0.25mH.

How does the on-resistance change at elevated temperatures?

At TJ = 150°C, the typical RDS(ON) increases to 6.7mΩ compared to 3.55mΩ at 25°C, based on test conditions of ID = 40A and VGS = 10V.

What is the reverse recovery time of the body diode?

The reverse recovery time (trr) is typically 33 ns when measured at ISD = 40A and dISD/dt = 100A/μs.