ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 200V 70A TO3P
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Download product information
Overview
The FD70N20PWD is an N-channel Power MOSFET manufactured by onsemi, designed for high-power switching applications. It features a maximum drain-source voltage (Vds) of 200 V and a continuous drain current (Id) of 70 A. The device utilizes a TO-3P package to facilitate efficient thermal management in demanding environments. Key electrical characteristics include a low on-state resistance, enabling high efficiency in power conversion circuits. This component is suitable for use in motor control, industrial power supplies, and other systems requiring robust voltage and current handling capabilities within the specified operating temperature range.
Feature Summary
- High current handling capability with a continuous drain current rating of 70 A
- Robust voltage blocking performance with a 200 V drain-source breakdown voltage
- Thermal optimization through the durable TO-3P surface-mount package design
Applications
- Motor control systems
- Industrial power supply units
- General-purpose power switching circuits
Procurement Notes
Verify the specific datasheet revision and manufacturer lot codes upon receipt to ensure compliance with technical specifications. Confirm that the TO-3P package dimensions match your PCB or heatsink requirements. Check for any automotive or industrial qualification certifications if required by your system design. Ensure proper electrostatic discharge precautions are taken during handling and installation.
Selection Notes
Select this component when a 200 V rating and 70 A continuous current capacity are required in a TO-3P form factor. Consider the thermal resistance characteristics of the package for your specific heatsinking solution. Evaluate the gate charge and switching speed parameters against your frequency requirements. Compare total power dissipation limits under your expected ambient temperature conditions.
Part Context
This part belongs to onsemi's discrete semiconductor transistor portfolio, specifically within the MOSFET category. It represents a standard power switching solution from a major global semiconductor supplier. The TO-3P package is a legacy yet reliable format often used in industrial and automotive applications where high current density and thermal stability are critical for long-term operational reliability.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics before considering alternative manufacturers.
