FD800R33KF2CNOSA1

Overview

The FD800R33KF2CNOSA1 is a single IGBT module from Infineon's IGBT2 series, designed for high-power industrial applications. It features a 3.3 kV collector-emitter voltage rating and supports a continuous collector current of 1.3 kA at 25°C. The device utilizes silicon technology with an IHM package style and screw mount installation. Key electrical parameters include a typical collector-emitter saturation voltage of 3.4 V and a maximum power dissipation of 9.6 kW. The operational temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.

Feature Summary

• High-voltage capability with 3.3 kV blocking voltage for robust grid and traction interfacing
• High-current handling with 1.3 kA continuous collector current capacity
• Industrial-grade thermal performance supporting operation up to 125°C junction temperature
• Single configuration within the standardized IHM mechanical housing

Applications

• High-power DC-DC converters
• Traction drive systems
• Industrial motor drives
• Grid connection inverters

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors due to potential supply chain variations. Confirm that the specific suffix 'NOSA1' matches the required datasheet revision and regulatory compliance status for your region. Check for end-of-life notifications as availability may be limited. Ensure thermal interface materials are compatible with the IHM package baseplate specifications before assembly.

Selection Notes

Select this module when system requirements demand high voltage isolation combined with substantial current carrying capacity in a single phase configuration. The IHM package offers standardized mounting dimensions suitable for existing heat sink designs. Consider the 3.4 V saturation voltage for efficiency calculations in high-frequency switching applications. Evaluate the 9.6 kW power dissipation limit against your thermal management strategy to ensure reliable long-term operation under peak load conditions.

Part Context

This component belongs to Infineon's IGBT2 product family, representing second-generation trench field-stop technology optimized for industrial power electronics. The FZ prefix typically denotes standard IGBT modules, while the 33 indicates the 3.3 kV voltage class. This series provides a balance between switching speed and conduction losses, widely used in medium to high-power conversion systems requiring reliable semiconductor switching elements.

Replacement Considerations

Public confirmed substitute part numbers: FZ800R33KF2C.