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The FD900R12IP4DV is a PrimePACK™2 IGBT module utilizing Trench/Fieldstop IGBT4 technology with an enlarged Emitter Controlled 4 diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 900 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1800 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 5,10 kW at TC = 25°C. The module includes an integrated NTC thermistor with a rated resistance (R25) of 5.00 kΩ at 25°C. It provides 4 kV AC insulation for 1 minute and operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Confirm RoHS compliance status and check for any preliminary data disclaimers in the latest datasheet revision before finalizing procurement specifications.
Select this module for applications requiring high current handling and robust short-circuit protection. Ensure thermal management design accounts for the specified RthJC values. Verify that the gate drive circuitry supports the required VGE levels and internal gate resistor characteristics for optimal switching performance.
This component belongs to the PrimePACK™2 series from Infineon Technologies. It integrates Trench/Fieldstop IGBT4 technology with an enlarged diode structure. The module is designed for industrial applications demanding high power density and reliable thermal cycling performance.
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