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Product Detailed Parameters
- Description：MOSFET N-CH 500V 16.5A TO3PN
- Series：UniFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FDA16N50-F109 is an N-channel enhancement mode MOSFET from the UniFET series by onsemi. It features a maximum drain-source voltage of 500 V and a continuous drain current of 16.5 A. The device has a maximum on-resistance of 380 mΩ and a power dissipation rating of 205 W. It operates within a temperature range of -55 °C to +150 °C, with a gate threshold voltage minimum of 3 V and a typical gate charge of 32 nC at 10 V. The component utilizes a TO-3PN package for through-hole mounting.
Feature Summary
- UniFET technology optimized for low on-resistance and fast switching performance
- Enhanced avalanche ruggedness for robust operation in inductive load applications
- High-voltage capability suitable for demanding power conversion environments
Applications
- Switching mode power supplies
- AC/DC power conversion systems
- Motor control circuits
Procurement Notes
Verify the specific suffix F109 against official datasheets to confirm packaging and tape-and-reel specifications. Ensure compatibility with thermal management requirements given the 205 W dissipation rating. Confirm RoHS compliance status as indicated in the latest manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component for high-voltage applications requiring reliable N-channel switching. The 500 V rating provides sufficient headroom for standard industrial voltages. Consider the TO-3PN package for ease of heatsinking in through-hole designs. Evaluate the 380 mΩ on-resistance against conduction loss requirements in the target circuit design.
Part Context
This part belongs to onsemi's UniFET family, designed for general-purpose power switching. The TO-3PN package offers a balance between high power handling and standard mounting techniques. It serves as a discrete solution for medium-power applications where integrated modules are not required.
Replacement Considerations
Direct substitutes include the FQAF16N50, which shares similar electrical characteristics but may differ in package style or specific parameter tolerances. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' equivalents.
