FDA79N15

Description：MOSFET N-CH 150V 79A TO3PN
Series：UniFET™
Mfr：onsemi
Package：Tube

SKU:880bb923518e Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FDA79N15 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 150V 79A TO3PN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDA79N15

Description：MOSFET N-CH 150V 79A TO3PN
Series：UniFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：30mOhm @ 39.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3410 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：417W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PN
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for FDA79N15

FDA79N15

Single FETs, MOSFETs Overview

The FDA79N15 is a 150V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features an on-state resistance of 0.03Ω at VGS = 10V and supports a continuous drain current of 79A at 25°C case temperature. The device includes a body diode with a peak reverse recovery dv/dt capability of 4.5 V/ns. It is housed in a TO-3PN package, operates within a junction temperature range of -55°C to +150°C, and has a maximum power dissipation of 417W at 25°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Engineered to withstand high energy pulses in avalanche and commutation modes.
Features improved dv/dt capability for enhanced reliability during fast switching operations.

Single FETs, MOSFETs Applications

High efficiency switched mode power supplies
Active power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific revision (Rev. A) matches your design requirements. Ensure the TO-3PN package dimensions align with your thermal management and PCB layout constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) and high current handling capability are required in a 150V application. Consider the TO-3PN package for its robust mechanical structure and thermal performance. Evaluate the gate charge and capacitance parameters against your driver capabilities to ensure optimal switching speeds and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the UniFET family of power transistors designed for general-purpose switching applications. It represents a standard discrete power MOSFET solution from Fairchild Semiconductor, now part of onsemi, focusing on balancing conduction losses with switching performance for industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for FDA79N15 equivalents from other manufacturers offering identical pinouts and electrical characteristics. Verify that any substitute maintains the same TO-3PN package form factor and meets or exceeds the 0.03Ω RDS(on) specification at VGS = 10V.