FDB060AN08A0

$2.45

Description：MOSFET N-CH 75V 16A/80A D2PAK
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4f0569861245 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDB060AN08A0 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 75V 16A/80A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDB060AN08A0

Description：MOSFET N-CH 75V 16A/80A D2PAK
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：255W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for FDB060AN08A0

FDB060AN08A0

Single FETs, MOSFETs Overview

The FDB060AN08A0 is an N-Channel PowerTrench MOSFET from onsemi, designed for surface-mount applications in the TO-263 (D2PAK) package. It features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 16 A at ambient temperature and 80 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 6 mΩ at Vgs = 10 V and Id = 80 A. Key electrical parameters include a gate charge (Qg) of 95 nC at 10 V, a threshold voltage (Vgs(th)) of 4 V max at 250 µA, and an input capacitance (Ciss) of 5150 pF at 25 V. It supports a power dissipation of 255 W at case temperature and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes PowerTrench technology for enhanced switching performance and low conduction losses.
Optimized for high-current applications with robust thermal handling capabilities in a surface-mount D2PAK package.
Features fast switching characteristics supported by low gate charge and optimized internal capacitances.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converter designs
Motor control circuits requiring low on-resistance
Power management systems in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and marking code against the latest manufacturer datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status and material declarations directly with onsemi or authorized distributors prior to procurement. Check for any recent Product Change Notifications (PCNs) regarding manufacturing site or packaging updates that may affect assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount N-channel MOSFET with 75 V rating and high current capacity is required. Ensure the PCB layout supports the thermal demands of the D2PAK package to achieve the specified 255 W power dissipation. Compare Rds(on) and Qg values against alternative packages like TO-220 if space constraints allow, to optimize system efficiency and switching speed.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's PowerTrench family of single N-channel MOSFETs. It shares similar electrical specifications with the through-hole FDP060AN08A0 but differs in package type, offering a surface-mount solution suitable for automated assembly. The FDB series is engineered for applications demanding reliable performance in compact power electronics designs.

Single FETs, MOSFETs Replacement Considerations

The FDP060AN08A0 is a pin-compatible through-hole alternative with identical electrical ratings. Verify thermal resistance differences between TO-263 and TO-220 packages when substituting. No other direct cross-references are confirmed in public documentation.