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FDB3652SB82059 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDB3652SB82059
- Description：MOSFET N-CH
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDB3652SB82059
FET, MOSFET Arrays Overview
The FDB3652SB82059 is an N-channel Power MOSFET from the PowerTrench series, manufactured by onsemi. It features a 100V drain-source voltage rating and operates in a TO-263 (D2PAK) surface-mount package. The device supports a continuous drain current of 9A at ambient temperature and 61A at case temperature, with a maximum power dissipation of 150W. Key electrical parameters include a gate threshold voltage of 4V at 250µA, a maximum gate charge of 53nC at 10V, and an input capacitance of 2880pF at 25V. The on-resistance is specified as 16mΩ at 61A and 10V.
FET, MOSFET Arrays Feature Summary
- Utilizes PowerTrench technology for optimized switching performance
- Designed for high-efficiency power management applications
- Features robust thermal characteristics for high-power dissipation
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power switching modules
- Motor control systems
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number matches the specific suffix requirements for your assembly process. Check for recent Product Change Notifications regarding manufacturing site or material updates to ensure compliance with current design specifications.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring a balance of low on-resistance and high current handling in a D2PAK footprint. Ensure the driving circuit can provide sufficient gate voltage to minimize conduction losses. Evaluate thermal management strategies to maintain junction temperatures within the specified operating range during peak load conditions.
FET, MOSFET Arrays Part Context
This component belongs to the FDB365 family of N-channel MOSFETs. It shares core architectural similarities with other devices in the series but offers specific current and resistance characteristics tailored for medium-power applications. The TO-263 package provides a cost-effective solution for surface-mount implementations requiring reliable heat sinking capabilities.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins before integrating any substitute components into existing designs.
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