FDBL0210N80

Single FETs, MOSFETs Overview

The FDBL0210N80 is a single N-Channel PowerTrench MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a TO-LL8-8 surface-mount package. The device features an 80 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 240 A. Its maximum on-resistance (Rds(on)) is 4.1 mΩ, with a gate threshold voltage (Vgs(th)) of 2 V. The component operates within a temperature range of -55 °C to +175 °C, dissipating up to 357 W of power. Key switching parameters include a gate charge (Qg) of 130 nC, a rise time of 63 ns, and a fall time of 33 ns.

Single FETs, MOSFETs Feature Summary

• High-current capability with 240 A continuous drain rating
• Low on-resistance for efficient power conduction
• Enhanced thermal stability operating up to 175 °C junction temperature

Single FETs, MOSFETs Applications

• DC-DC power conversion circuits
• Industrial motor control systems
• Power supply load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the requested variant matches the required RoHS and REACH compliance standards for your region. Cross-reference the part number with the latest onsemi documentation to validate active status and availability before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling at low voltage levels. The TO-LL8-8 package offers a compact footprint suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified 20 V maximum rating. Evaluate thermal management requirements based on the 357 W power dissipation capability and the target ambient operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family from onsemi, designed for general-purpose power switching applications. It represents a silicon-based solution distinct from wide-bandgap alternatives like Silicon Carbide or Gallium Nitride. The product line focuses on balancing performance and cost for standard voltage industrial and consumer electronics markets.

Single FETs, MOSFETs Replacement Considerations

Consult onsemi's official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout compatibility and meets or exceeds the 80 V / 240 A specifications.