FDC6000NZ

Description：MOSFET 2N-CH 20V 7.3A 6SSOT
Series：PowerTrench®

SKU:8854ee9246f3 Category: FET, MOSFET Arrays Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FDC6000NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 7.3A 6SSOT. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6000NZ

Description：MOSFET 2N-CH 20V 7.3A 6SSOT
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.3A
Rds On (Max) @ Id, Vgs：20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：840pF @ 10V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package：SuperSOT™-6 FLMP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDC6000NZ

FDC6000NZ

FET, MOSFET Arrays Overview

The FDC6000NZ is a dual N-Channel PowerTrench MOSFET optimized for battery power management applications. It features a wide gate drive voltage range of 2.5V to 12V and utilizes advanced trench technology for low on-resistance. The device is housed in an FLMP SuperSOT-6 package with bottom drain contact for enhanced thermal performance. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 20 V, continuous drain current (ID) of 7.3 A, and static drain-source on-resistance (RDS(on)) ranging from 16.5 mΩ at VGS = 4.5 V to 28 mΩ at VGS = 2.5 V. The operating junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration with independent channels sharing common source pins
Optimized for low gate drive voltages starting at 2.5V
Integrated ESD protection diode between gate and source
SuperSOT-6 package design with bottom drain contact for improved heat dissipation

FET, MOSFET Arrays Applications

Battery management systems
Charger applications
Load switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete within the Fairchild Semiconductor product line before finalizing procurement plans. Confirm that the ordering suffix NZ corresponds to the standard reel packaging specifications provided in the datasheet. Ensure compatibility with the specified FLMP SuperSOT-6 footprint during the design phase.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low-voltage operation down to 2.5V gate drive. Consider the thermal resistance values based on the specific copper pad layout used on the PCB. Evaluate the single versus dual operation power dissipation limits to ensure adequate cooling for the intended load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family developed by Fairchild Semiconductor, which has since been acquired by onsemi. The FDC6000NZ represents a specialized dual-channel variant designed specifically for portable electronics and battery-powered devices where space and efficiency are critical constraints.