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FDC6000NZ_F077 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 7.3A 6SSOT. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDC6000NZ_F077
- Description：MOSFET 2N-CH 20V 7.3A 6SSOT
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.3A
- Rds On (Max) @ Id, Vgs：20mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：840pF @ 10V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Supplier Device Package：SuperSOT™-6 FLMP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDC6000NZ_F077
FET, MOSFET Arrays Overview
The FDC6000NZ is a dual N-Channel PowerTrench MOSFET optimized for battery power management applications. It features a FLMP SuperSOT-6 package with bottom drain contact for enhanced thermal performance. The device supports gate drive voltages from 2.5V to 12V, offering an RDS(ON) of 20 mΩ at VGS = 4.5V and 28 mΩ at VGS = 2.5V. Continuous drain current reaches 7.3A, with a breakdown voltage of 20V. Thermal resistance (junction-to-ambient) is 68°C/W on a 1in² pad.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel configuration in a compact FLMP SuperSOT-6 package
- Optimized for low gate drive voltages ranging from 2.5V to 12V
- Integrated ESD protection diode between gate and source
FET, MOSFET Arrays Applications
- Battery management systems
- Charger applications
- Load switch circuits
FET, MOSFET Arrays Procurement Notes
Verify the component status as obsolete within the Fairchild Semiconductor product line. Confirm that the specific ordering suffix corresponds to the standard reel quantity of 3000 units in an 8mm tape width. Ensure compatibility with the legacy manufacturer's specifications before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring low on-resistance at reduced gate drive voltages. The dual channel architecture allows for efficient space utilization in load switching or battery protection circuits. Evaluate the thermal requirements against the specified junction-to-ambient resistance values for the target PCB copper area.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench family utilizing advanced trench technology for low RDS(ON). Manufactured originally by Fairchild Semiconductor, it represents a rugged gate version designed for high-performance power management. The device integrates body diode characteristics suitable for synchronous rectification or freewheeling duties.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference availability through official distributor channels due to the obsolete status.
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