FDC6301N

FET, MOSFET Arrays Overview

The onsemi FDC6301N is a dual N-channel digital MOSFET housed in an SOT-23-6 package. It integrates two enhancement-mode field-effect transistors with built-in gate-source Zener diodes for ESD protection, rated at over 6kV Human Body Model. Key electrical parameters include a drain-source breakdown voltage (VDS) of 25 V and a continuous drain current (ID) of 220 mA. The device exhibits a maximum on-state resistance (RDS(on)) of 4 Ω at VGS = 4.5 V and 5 Ω at VGS = 2.7 V. The gate-source threshold voltage (VGS(th)) is less than 1.5 V, enabling direct operation in 3 V logic circuits. Operating temperature ranges from -55 °C to +150 °C, with a power dissipation of 300 mW.

FET, MOSFET Arrays Feature Summary

• Integrates dual N-channel logic level enhancement mode FETs with internal biasing, eliminating the need for external resistors.

FET, MOSFET Arrays Applications

• Low voltage switching applications requiring direct 3 V logic interface.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official manufacturer documentation. Check for obsolescence notices as this part may be discontinued or superseded by newer equivalents. Ensure storage conditions meet specified limits to prevent moisture sensitivity issues prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component for space-constrained designs needing dual N-channel switching without external bias networks. Verify that the 220 mA continuous current rating meets load requirements. Ensure the 25 V voltage rating exceeds peak circuit voltages. Consider the 4 Ω RDS(on) for power loss calculations in low-current applications.

FET, MOSFET Arrays Part Context

This device belongs to the family of digital FETs produced using high cell density DMOS technology. It serves as a compact replacement for multiple discrete digital transistors and bias resistors. The design minimizes on-state resistance while maintaining robust ESD protection suitable for consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified sources. Evaluate equivalent dual N-channel digital FETs in SOT-23-6 packages with matching 25 V/220 mA ratings and integrated ESD protection if sourcing is restricted.