FDC6304P

FET, MOSFET Arrays Overview

The FDC6304P is a P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It utilizes PowerTrench technology to achieve low on-resistance and fast switching speeds. The device features a drain-source voltage rating of 20 V and a continuous drain current capability of 5.5 A at 25°C ambient temperature. Key electrical parameters include a maximum drain-source on-resistance of 45 mΩ at a gate-source voltage of 4.5 V, and a threshold voltage ranging from 0.8 V to 1.5 V. The component is housed in a compact DFN3 package with dimensions of 2 mm by 2.5 mm, designed for surface mount applications.

FET, MOSFET Arrays Feature Summary

• PowerTrench technology enables low thermal resistance and efficient heat dissipation.
• Logic-level gate drive compatibility allows direct interfacing with standard logic outputs.
• Ultra-low profile surface mount package optimizes board space utilization.

FET, MOSFET Arrays Applications

• Load switch circuits in portable consumer electronics
• Power management modules for battery-operated devices
• High-side switching applications in automotive infotainment systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the specific ordering suffix matches the required packaging configuration. Check RoHS compliance status and material content declarations as specified in the datasheet. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for 20 V systems. Evaluate the thermal performance under expected load conditions to ensure junction temperatures remain within safe operating limits. Consider the gate charge characteristics for high-frequency switching applications to minimize driver losses.

FET, MOSFET Arrays Part Context

This device belongs to the FDC6304 family of PowerTrench P-Channel MOSFETs. It shares similar electrical characteristics with other members of the series but may differ in packaging or specific parameter tolerances. The family is designed for general-purpose power switching applications requiring small form factors.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify pinout compatibility and electrical specifications before considering alternative components from other manufacturers.

FET, MOSFET Arrays FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (Vdss) is rated at 20 V.

What is the typical on-resistance at 4.5 V gate drive?

The maximum drain-source on-resistance (Rds(on)) is 45 mΩ when measured at a gate-source voltage of 4.5 V and a drain current of 5.5 A.

What package type does the FDC6304P use?

The component is supplied in a DFN3 package with dimensions of 2 mm by 2.5 mm.