FDC6306P

FET, MOSFET Arrays Overview

The FDC6306P is a dual P-Channel MOSFET manufactured by onsemi using the PowerTrench process. It features a SuperSOT-6 package with dimensions significantly smaller than standard SO-8. Key electrical parameters include a drain-source voltage (Vds) of -20 V and a continuous drain current (Id) of -1.9 A. The on-resistance (Rds(on)) is specified at 0.170 Ω at Vgs = -4.5 V and 0.250 Ω at Vgs = -2.5 V. Typical gate charge is 3 nC, supporting fast switching speeds. The device operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel configuration in a compact SuperSOT-6 package
• PowerTrench technology for minimized on-state resistance
• Low gate charge for superior switching performance
• High power dissipation capability relative to footprint size

FET, MOSFET Arrays Applications

• Load switch applications
• Battery protection circuits
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets or material composition reports. Check for obsolescence notices as legacy components may have limited availability. Ensure packaging specifications match design requirements for surface mount assembly.

FET, MOSFET Arrays Selection Notes

Select this component for space-constrained designs requiring dual P-channel switching. Verify that the -20 V rating meets system voltage requirements. Consider the Rds(on) values at specific Vgs levels for thermal management calculations. Ensure gate drive voltages align with the 2.5 V and 4.5 V specification points for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench MOSFET family from onsemi (formerly Fairchild Semiconductor). It is designed to replace larger packages like SO-8 and TSSOP-8 where board space is limited. The SuperSOT-6 package offers a 72% reduction in footprint compared to standard SO-8 while maintaining high performance characteristics suitable for portable electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include SI6943DQ, SI6963DQ, and SI9934DY from Fairchild/onsemi. These parts share similar dual P-Channel specifications and PowerTrench technology. Verify pinout compatibility and exact electrical parameter matches before substitution.