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FDC6333C-G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 2.5A SSOT6. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDC6333C-G
- Description：MOSFET N/P-CH 30V 2.5A SSOT6
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs：95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V, 5.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：282pF @ 15V, 185pF @ 15V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SuperSOT™-6
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDC6333C-G
FET, MOSFET Arrays Overview
The FDC6333C-G is a dual N- and P-channel enhancement mode MOSFET manufactured by onsemi using the PowerTrench process. It features an SSOT-6 surface-mount package with dimensions significantly smaller than SO-8 alternatives. The N-channel device (Q1) supports a drain-source voltage of 30 V and continuous current of 2.5 A, with an on-resistance of 95 mΩ at VGS = 10 V. The P-channel device (Q2) supports -30 V and -2.0 A, with an on-resistance of 130 mΩ at VGS = -10 V. Operating temperatures range from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- PowerTrench technology minimizes on-state resistance while maintaining superior switching performance.
- SSOT-6 package provides a small footprint that is 72% smaller than SO-8 packages.
- Low gate charge characteristics reduce switching losses and improve speed.
FET, MOSFET Arrays Applications
- DC/DC converters
- Load switches
- LCD display inverters
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'G' against the official datasheet to confirm it denotes lead-free compliance or specific tape-and-reel packaging variations. Ensure the ordering part number matches the manufacturer's current catalog exactly to avoid discrepancies in package type or electrical ratings.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring a compact dual MOSFET solution where board space is limited. The low profile and reduced footprint make it suitable for designs where larger packages like SO-8 are impractical. Verify that the required gate drive voltages align with the specified RDS(on) thresholds for optimal efficiency.
FET, MOSFET Arrays Part Context
This device belongs to the FDC6333 series of dual MOSFETs. It serves as a high-density alternative to discrete single-channel MOSFETs or larger dual packages. The PowerTrench process distinguishes it within onsemi's portfolio by optimizing the trade-off between conduction loss and switching speed in a minimal outline.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include other dual N/P MOSFETs in SSOT-6 or SOT-363 packages with comparable 30V ratings. Verify pinout compatibility and thermal resistance values when replacing with devices from different manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
