FDC6333C

FET, MOSFET Arrays Overview

The FDC6333C is a dual N- and P-channel MOSFET manufactured by onsemi using the POWERTRENCH process. It integrates two independent transistors in a single SuperSOT-6 package, which measures 1 mm in thickness and occupies 72% less area than SO-8 packages. The N-channel device (Q1) supports a continuous drain current of 2.5 A with a maximum drain-source voltage of 30 V. Its on-state resistance is specified at 95 mΩ at VGS = 10 V and 150 mΩ at VGS = 4.5 V. The P-channel device (Q2) provides a continuous drain current of -2.0 A with a breakdown voltage of -30 V. Q2 exhibits an on-state resistance of 130 mΩ at VGS = -10 V and 220 mΩ at VGS = -4.5 V.

FET, MOSFET Arrays Feature Summary

• Advanced POWERTRENCH technology minimizes on-state resistance while maintaining superior switching performance.
• SuperSOT-6 package offers a compact footprint and low profile for space-constrained designs.
• Low gate charge characteristics reduce switching losses and improve overall efficiency.

FET, MOSFET Arrays Applications

• DC/DC converters
• Load switches
• LCD display inverters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type is SuperSOT-6 and ensure lead-free compliance matches environmental standards. Cross-reference ordering information to validate specific reel sizes and quantity configurations before finalizing acquisition.

FET, MOSFET Arrays Selection Notes

Select this component when design constraints require a small surface-mount footprint with integrated N- and P-channel functionality. Ensure the required operating voltage does not exceed 30 V and that the load current remains within the 2.5 A and -2.0 A limits for the respective channels. Verify thermal management capabilities align with the junction-to-ambient thermal resistance values provided in the datasheet.

FET, MOSFET Arrays Part Context

This device belongs to the FDC series of dual MOSFETs designed for power distribution applications. It serves as a compact alternative to larger discrete packages like SO-8 or TSSOP-8, enabling higher density circuit board layouts. The integration of complementary channel types simplifies schematic design for half-bridge and load switch topologies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material. Evaluate other devices from the same family based on matching voltage ratings, current capacities, and package dimensions to ensure mechanical and electrical compatibility.