FDC6401N

FET, MOSFET Arrays Overview

The FDC6401N is a dual N-channel MOSFET from onsemi, utilizing PowerTrench technology to optimize DC/DC converter efficiency. It features a 20V drain-source breakdown voltage and supports a continuous drain current of 3A at 25°C. The device offers an extremely low on-resistance (RDS(on)) of 70mΩ, minimizing conduction losses. Designed for synchronous or conventional topologies, it incorporates low gate charge characteristics to enhance switching performance in compact applications.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration designed for improved DC/DC converter efficiency
• PowerTrench technology ensures extremely low RDS(on) for high performance
• Low gate charge facilitates faster switching and reduced drive requirements

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-to-DC converters
• Conventional DC/DC converter topologies
• General-purpose power switching applications requiring low on-resistance

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official onsemi datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all electrical parameters required for your target application, particularly regarding thermal management and voltage ratings. Cross-reference the manufacturer's part number with authorized distributors to avoid counterfeit products and ensure supply chain integrity.

FET, MOSFET Arrays Selection Notes

Select this component when designing power stages that require a dual N-channel solution with minimal conduction loss. The 20V rating suits low-voltage systems, while the 3A current capability supports moderate load requirements. Consider the TSOT-23 package size for space-constrained PCB layouts. Ensure the driver circuit can handle the specified gate charge to maintain optimal switching speeds without excessive heat generation.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench MOSFET family, which emphasizes high-performance trench gate technology. The dual configuration allows for efficient half-bridge or synchronous buck implementations within a single small outline package. It serves as a compact alternative to discrete single-channel solutions, reducing board space and assembly complexity in modern power management designs.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi's official replacement guide for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting. Ensure any alternative maintains the same dual N-channel architecture and package dimensions to fit existing footprints without redesign.